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Semiconductor Interfaces: Formation and Properties

Proceedings of the Workkshop, Les Houches, France February 24–March 6, 1987

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389pagine
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14ore

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(ii) Fine characterization down to the atomic scale using recently devel- oped, powerful techniques such as scanning tunneling microscopy, high reso- lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure.

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Semiconductor Interfaces: Formation and Properties, AA.VV.

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Pubblicato
2011
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