Thermodynamic basis of crystal growth

Autori

• Jacob H. Greenberg

Parametri

• 249 pagine
• 9 ore di lettura

• Fisica
• Scienze Naturali

Maggiori informazioni sul libro

This book presents a new and promising technique to grow single crystalline compound semiconductor materials with defined stoichometry. The technique is based on the high-precision experimental determination of the boundaries of the single-phase volume of the solid in the pressure-temperature-composition P-T-X phase space. Alongside test results obtained by the author and his colleagues, the P-T-X diagrams of other important materials (e.g., III-V, V-VI semiconductors) are also discussed.

Lingua: Inglese

Pubblicato: 2002

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