Multi-run Memory Tests for Pattern Sensitive Faults

Autori

• Ireneusz Mrozek

Parametri

• 148 pagine
• 6 ore di lettura

• Architettura e urbanistica
• Computer, IT, programmazione
• Tecnologia e Ingegneria

Maggiori informazioni sul libro

The book focuses on advanced techniques for both production and periodic maintenance testing of semiconductor memory, particularly addressing multi-cell faults. It explores background selection and address reordering algorithms within multi-run transparent march testing processes. The author presents formal methods for generating multi-run tests, emphasizing solutions to enhance efficiency. Each method is thoroughly validated through analytical investigations and numerical simulations, ensuring a comprehensive understanding of the testing processes in modern semiconductor technology.

Lingua: Inglese

Pubblicato: 2019

(In brossura)