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The book delves into the critical role of semiconductor device modeling in meeting the stringent performance demands of high-performance applications. It emphasizes the complexity and cost of modern devices, highlighting the need for sophisticated compact models that accurately reflect the physical effects in advanced Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs). Additionally, it discusses the importance of model parameters in ensuring the practical applicability of these models in the industry.
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Model Parameter Extraction for Very Advanced Heterojunction Bipolar Transistors, Julia Krause
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- Pubblicato
- 2016
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